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SKM200GAL12T4_0906 Datasheet, PDF (2/5 Pages) Semikron International – Fast IGBT4 Modules | |||
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SKM200GAL12T4
SEMITRANS®3
Fast IGBT4 Modules
SKM200GAL12T4
Features
⢠VCE(sat) with positive temperature
coefficient
⢠High short circuit capability, self
limiting to 6 x Icnom
⢠Fast & soft inverse CAL diodes
⢠Large clearance (10 mm) and
creepage distances (20 mm)
⢠Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
Typical Applications
⢠DC/DC â converter
⢠Brake chopper
⢠Switched reluctance motor
⢠DC â motor
Remarks
⢠Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
Characteristics
Symbol Conditions
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
VCC = 600 V
Tj = 150 °C
IC = 200 A
Tj = 150 °C
VGE = ±15 V
RG on = 1 â¦
RG off = 1 â¦
Tj = 150 °C
Tj = 150 °C
di/dton = 5500 A/µs Tj = 150 °C
di/dtoff = 2300 A/µs Tj = 150 °C
per IGBT
Inverse diode
VF = VEC
IF = 200 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0
rF
IRRM
Qrr
Err
Rth(j-c)
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
IF = 200 A
Tj = 150 °C
di/dtoff = 4450 A/µs
VGE = ±15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
per diode
Freewheeling diode
VF = VEC
IF = 200 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0
rF
IRRM
Qrr
Err
Rth(j-c)
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
IF = 200 A
Tj = 150 °C
di/dtoff = 4450 A/µs
VGE = ±15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
per Diode
Module
LCE
RCC'+EE'
terminal-chip
TC = 25 °C
TC = 125 °C
Rth(c-s)
Ms
Mt
per module
to heat sink M6
to terminals M6
w
min.
typ.
max. Unit
185
ns
40
ns
21
mJ
425
ns
82
ns
20
mJ
0.14 K/W
2.2
2.52
V
2.15
2.47
V
1.3
1.5
V
0.9
1.1
V
4.5
5.1
mâ¦
6.3
6.8
mâ¦
174
A
33
µC
13
mJ
0.26 K/W
2.2
2.52
V
2.15
2.47
V
1.3
1.5
V
0.9
1.1
V
4.5
5.1
mâ¦
6.3
6.8
mâ¦
174
A
33.1
µC
13
mJ
0.26 K/W
15
20
nH
0.25
mâ¦
0.5
mâ¦
0.02
0.038 K/W
3
5
Nm
2.5
5
Nm
Nm
325
g
GAL
2
Rev. 2 â 16.06.2009
© by SEMIKRON
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