SKM195GB126D Datasheet, PDF (2/6 Pages) Semikron International – Trench IGBT Modules

SKM 195GB126D ...
SEMITRANS^® 2
Trench IGBT Modules
SKM 195GB126D
SKM 195GAL126D
Preliminary Data
Features
 ^{      }
 ^  ^{   }
 
 ^{      ! }
  " # $_
Typical Applications
 ^{%  &}
 ^'()
 ^{  &}
Characteristics
Symbol Conditions
Inverse Diode
_;  _
$_;  /00 %7 _5  0 
_-  *+ , _=
_-  /*+ , _=
_;0
_-  *+ ,
_-  /*+ ,
_;
_-  *+ ,
_-  /*+ ,
$₂₂₃
D_
_
$_;  /+0 %
&I&  **00 %I:
_-  /*+ ,
_5  ?/+ 7 _  "00 
2_{ -? K}
 &&
Freewheeling diode
_;  _
$_;  /00 %7 _5  0 
_-  *+ , _=
_-  /*+ , _=
_;0
_-  *+ ,
_-  /*+ ,
_;
_-  *+ ,
_-  /*+ ,
$₂₂₃
D_
_
$_;  /+0 %
&I&  **00 %I:
_-  /*+ ,
_5  ?/+ 7 _  "00 
2_{ -? ;K}
Module
 &&
L_
2_MAM
=!  ? 
 _ *+ ,
 _ /*+ ,
2_{  ?}
3_
 &
   N 3"
3_
   3+

min.
4
*!+
typ.
*
/!1
/!/
>
1"
/<
+!1
*
/!1
/!/
>
1"
/<
+!1
0!<+
/
max. Units
*!+


/!*


/4
B
B
%
:
F
0!4* HIJ
*!+


/!*


/4


%
:
F
0!4* HIJ
40

B
B
0!0+ HIJ
+
O
+
O
/"0

This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
GAL
2
11-09-2006 SEN
© by SEMIKRON