SKM195GB066D Datasheet, PDF (2/6 Pages) Semikron International – Trench IGBT Modules

SKM 195GB066D
SEMITRANS^® 2
Trench IGBT Modules
SKM195GB066D
SKM 195GAL066D
Preliminary Data
Characteristics
Symbol Conditions
Inverse Diode
_B  _
&_{B }  ,22 '? _5  2 
_B2
_B
&_44;
G_
_
&_{B }  ,22 '
(J(  ,222 'JA
_5  8: ? _  >22 
4_08N
Module
  ((
O_
4_PCP
 /#   8
4_8
;
;_

  (
    7 ;$
    ;-
₀  ,- ._{ /}
₀  ,- .
₀  ,- .
₀  +-2 .
_  ,- .
_  +,- .
min.
>
,#-
typ.
+#<
2#D-
,#>
+22
>2
-#$
2#9-
+
max. Units
+#$

+

>
E
'
A
I
2#<
LJM
>2

E
E
2#2- LJM
-
Q
-
Q
+-2

Features
 ^{  }
 ^{       }
 ^ ^{ }
    !! 
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 !    $ % &_
Typical Applications
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
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Remarks
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_  +,-. %/#
(  /   ( !
₀ 1+-2.
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GB
GAL
2
07-02-2007 RAA
© by SEMIKRON