SKM150GB173D_06 Datasheet, PDF (2/6 Pages) Semikron International – IGBT Modules

SKM 150GB173D
SEMITRANS^® 3
IGBT Modules
Characteristics
Symbol Conditions
Inverse Diode
( ⁷ 9*
&_{( } 7 .11 +@ _>9 7 1
(1
₍
&_==
M_
9_
=_{ :',}
Module
&_{( } 7 .11 +
K 7 .111 +KC
>9 ^{7 '.2 @} ** ^{7 .011}
 
6_: 7 02 8*_{ 5}
6_: 7 .02 8*_{ 5}
6_: 7 .02 8*
6_: 7 .02 8*
6_: 7 .02 8*
min.
typ.
00
.F
.0
3
31
03
max. Units
03
0D
.2
F
G
+
C*
I
1D
JKL
SKM 150GB173D
_*9
=_**NE99N
5  '
=_{ '}



 
   O $
   $
6_7 02 8*
6_7 .02 8*
/
02
.2
01

1/2
G
12
G
11/< JKL
2

2

/02

Features
 ^{     }
 ^{     }
 ^{    }
 ^{!      }
     
 ^{    "! #}
   $ % &_{ }
 ^{' #}
 ^{( ) #   *+ }
 ^{&   "   }
,*- , *  -  
 ^{   ./   }
    01 
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Typical Applications
 ^{+*       232 '}
321 _+*
 ^{,* "  321 ' .011} ,*
 ^{4"    %! !5}
 ^{   #   }
GB
2
15-09-2006 RAA
© by SEMIKRON