SKM150GB12T4G Datasheet, PDF (2/5 Pages) Semikron International – IGBT4 Modules

SKM 150GB12T4G
SEMITRANS^® 3
IGBT4 Modules
Characteristics
Symbol Conditions
Inverse Diode
_F _
_{F } 673 -C _ 3 
_F3
_F
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I_
_
_{F } 673 -
_ 967
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Freewheeling Diode
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_; 673 8_$
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_; 673 8
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min.
typ.
2&2
2&6
6&A
3&G
'
?
66&A
max. Units
2&7

2& 7

6&7

6&6

'&'> H
G
H
-
E
L
3&A2 MJN
SKM 150GB12T4G
Target Data
Features
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// -. 
Typical Applications
_F _
_F3
_F
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I_
_
Module
._
@_O:O
@_9
+_
+_

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_{F } -
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A
2&7



-
E
L
MJN
67
23
!
3&A7 H
3&7
H
3&32
3&3A? MJN
7
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7
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A27
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4!5
Remarks
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6278 (&  _ 9 3 
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This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
11-07-2007 SCH
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