SKM150GB12T4 Datasheet, PDF (2/5 Pages) Semikron International – IGBT4 Modules

SKM 150GB12T4
SEMITRANS^® 2
IGBT4 Modules
Characteristics
Symbol Conditions
Inverse Diode
_F _
_{F } 673 +C _ 3 
_F3
_F
_AA)
I_
_
_{F } 673 +
A_.;9/
 --
Freewheeling Diode
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_; 673 8_"
_; 27 8
_; 673 8
_; 27 8
_; 673 8
_; 673 8
min.
typ.
2$67
2$37
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3$G
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66$?
max. Units
2$ 7

2$

6$7

6$6

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+
E
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_F _
_{F } +C _ 
_; 8_"

SKM 150GB12T4
_F3
_; 8

_F
_; 8

_AA)
_{F } +
_; 8
+
Target Data
I_
E
_
L
 --
MJN
Features
Module
 ^{    }
 ^ ^{  }
 
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"  % & _'()
 ^{*    +,}
-- .+, /
Typical Applications
,_
A_O:O
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)_

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_ 27 8
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2$7
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45
Remarks
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This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
11-07-2007 SCH
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