SKM150GB123D_06 Datasheet, PDF (2/6 Pages) Semikron International – IGBT Modules

SKM 150GB123D
SEMITRANS^® 3
IGBT Modules
SKM 150GB123D
SKM 150GAL123D
Features
 ^{     }
 ^{     }
 ^{    }
 ^{!      }
     
 ^{    "! #}
   $ % &_{ }
 ^{' #}
 ^{( ) #   *+ }
 ^{&   "   }
,*- , *  -  
 ^{   ./   }
    /0 
Typical Applications
 ^{+*   }
 ^12
Characteristics
Symbol Conditions
Inverse Diode
( ⁴ 7*
&_{( } 4 .00 +> _<7 4 0
(0
₍
&_;;
I_
7_
&_{( } 4 .00 +
N 4 .000 +NA
<7 ^{4 0 >} ** ^{4 $00}
;_{ 8',}
 
Freewheeling Diode
( ⁴ 7*
&_{( } 4 .50 +> _<7 4 0
(0
₍
&_;;
I_
7_
;_{ 8'(,}
Module
_*7
;_**PE77P
&_{( } 4 .00 +
<7 ^{4 0 >} ** ^{4 $00}
 
B  '
;_{ '}



 
   Q $
   $
min.
3₈ 4 /5 6*_{ B}
3₈ 4 ./5 6*_{ B}
3₈ 4 /5 6*
3₈ 4 ./5 6*
3₈ 4 /5 6*
3₈ 4 ./5 6*
3₈ 4 ./5 6*
3₈ 4 /5 6*_{ B}
3₈ 4 ./5 6*_{ B}
3₈ 4 /5 6*
3₈ 4 ./5 6*
3₈ 4 /5 6*
3₈ 4 ./5 6*
3₈ 4 /5 6*
3_4 /5 6*
3_4 ./5 6*
C
/5
typ.
/
.:
..
G
50
5
/
.:
..
$
D0
5
.5
0C5
05
max. Units
/5
./
.C
F
F
+
A*
K
0C
MNO
/5
./
:L
+
A*
K
0/5 MNO
/0

F
F
00C: MNO
5

5

C/5

This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
GAL
2
11-09-2006 RAA
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