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SKM150GAL12V Datasheet, PDF (2/3 Pages) Semikron International – Target Data
SKM150GAL12V
SEMITRANS® 2
SKM150GAL12V
Target Data
Features
• VCE(sat) with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
• UL recognized, file no. E63532
Typical Applications*
• DC/DC – converter
• Brake chopper
• Switched reluctance motor
• DC – Motor
Characteristics
Symbol Conditions
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
VCC = 600 V
IC = 150 A
VGE = ±15 V
RG on = 0.67 Ω
RG off = 0.67 Ω
per IGBT
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Inverse diode
VF = VEC
IF = 150 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0
rF
IRRM
Qrr
Err
Rth(j-c)
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
IF = 150 A
Tj = 150 °C
di/dtoff = 3100 A/µs
VGE = ±15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
per diode
Freewheeling diode
VF = VEC
IF = 150 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0
rF
IRRM
Qrr
Err
Rth(j-c)
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
IF = 150 A
Tj = 150 °C
di/dtoff = 3100 A/µs
VGE = ±15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
per Diode
Module
LCE
RCC'+EE'
terminal-chip
TC = 25 °C
TC = 125 °C
Rth(c-s)
Ms
Mt
per module
to heat sink M6
to terminals M5
w
min.
typ.
max. Unit
ns
ns
15
mJ
ns
ns
12
mJ
0.19 K/W
2.1
2.5
V
2.1
2.4
V
1.3
1.5
V
0.9
1.1
V
5.6
6.4
mΩ
7.8
8.5
mΩ
120
A
31.3
µC
13
mJ
0.31 K/W
2.14
2.46
V
2.07
2.38
V
1.3
1.5
V
0.9
1.1
V
5.6
6.4
mΩ
7.8
8.5
mΩ
120
A
31.3
µC
13
mJ
0.31 K/W
30
nH
0.65
mΩ
1
mΩ
0.04
0.05 K/W
3
5
Nm
2.5
5
Nm
Nm
160
g
GAL
2
Rev. 0 – 23.12.2009
© by SEMIKRON