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SKM150GAL12T4_13 Datasheet, PDF (2/5 Pages) Semikron International – Fast IGBT4 Modules | |||
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SKM150GAL12T4
SEMITRANS® 2
Fast IGBT4 Modules
SKM150GAL12T4
Features
⢠IGBT4 = 4. generation fast trench IGBT
(Infineon)
⢠CAL4 = Soft switching 4. generation
CAL-diode
⢠Isolated copper baseplate using DBC
technology (Direct Bonded Copper)
⢠Increased power cycling capability
⢠With integrated gate resistor
⢠For higher switching frequenzies up to
20kHz
⢠UL recognized, file no. E63532
Typical Applications*
⢠Electronic welders at fsw up to 20 kHz
⢠DC/DC â converter
⢠Brake chopper
⢠Switched reluctance motor
Remarks
⢠Case temperature limited
to Tc = 125°C max.
⢠Recommended Top = -40 ... +150°C
⢠Product reliability results valid
for Tj = 150°C
Characteristics
Symbol
td(on)
tr
Eon
td(off)
tf
Eoff
Conditions
VCC = 600 V
Tj = 150 °C
IC = 150 A
VGE = ±15 V
RG on = 1 ï
RG off = 1 ï
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 3400 A/µs Tj = 150 °C
di/dtoff = 1750 A/µs Tj = 150 °C
Rth(j-c)
per IGBT
Inverse diode
VF = VEC
IF = 150 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-c)
chiplevel
Tj = 25 °C
Tj = 150 °C
IF = 150 A
Tj = 150 °C
di/dtoff = 3100 A/µs
VGE = ±15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
per diode
Freewheeling diode
VF = VEC
IF = 150 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-c)
chiplevel
Tj = 25 °C
Tj = 150 °C
IF = 150 A
Tj = 150 °C
di/dtoff = 3100 A/µs
VGE = ±15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
per Diode
Module
LCE
RCC'+EE'
terminal-chip
TC = 25 °C
TC = 125 °C
Rth(c-s)
per module
Ms
to heat sink M6
Mt
to terminals M5
w
min.
typ.
max. Unit
180
ns
42
ns
19.2
mJ
410
ns
72
ns
15.8
mJ
0.19 K/W
2.14
2.46
V
2.07
2.38
V
1.3
1.5
V
0.9
1.1
V
5.6
6.4
mï
7.8
8.5
mï
120
A
31.3
µC
13
mJ
0.31 K/W
2.14
2.46
V
2.07
2.38
V
1.3
1.5
V
0.9
1.1
V
5.6
6.4
mï
7.8
8.5
mï
120
A
31.3
µC
13
mJ
0.31 K/W
30
nH
0.65
mï
1
mï
0.04
0.05 K/W
3
5
Nm
2.5
5
Nm
Nm
160
g
GAL
2
Rev. 2 â 03.09.2013
© by SEMIKRON
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