SKM150GAL12T4_10 Datasheet, PDF (2/5 Pages) Semikron International – Fast IGBT4 Modules

SKM150GAL12T4
SEMITRANS^® 2
Fast IGBT4 Modules
SKM150GAL12T4
Features
• IGBT4 = 4. Generation (Trench)IGBT
• V_CEsat with positive
temperaturecoefficient
• High short circuit capability, selflimiting
to 6 x I_CNOM
• Soft switching 4. Generation CALdiode
(CAL4)
Typical Applications*
• DC/DC – converter
• Brake chopper
• Switched reluctance motor
• DC – Motor
Remarks
• Case temperature limited to
T_c = 125°C max, recomm.
T_op = -40 ... +150°C, product
rel. results valid for T_j = 150°
Characteristics
Symbol
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
Conditions
V_CC = 600 V
T_j = 150 °C
I_C = 150 A
V_GE = ±15 V
R_{G on} = 1 Ω
T_j = 150 °C
T_j = 150 °C
R_{G off} = 1 Ω
T_j = 150 °C
di/dt_on = 3400 A/µs T_j = 150 °C
di/dt_off = 1750 A/µs _{Tj = 150 °C}
R_th(j-c)
per IGBT
Inverse diode
V_F = V_EC
I_F = 150 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 150 °C
V_F0
T_j = 25 °C
T_j = 150 °C
r_F
T_j = 25 °C
T_j = 150 °C
I_RRM
Q_rr
E_rr
I_F = 150 A
T_j = 150 °C
di/dt_off = 3100 A/µs
V_GE = ±15 V
T_j = 150 °C
V_CC = 600 V
T_j = 150 °C
R_th(j-c)
per diode
Freewheeling diode
V_F = V_EC
I_F = 150 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 150 °C
V_F0
T_j = 25 °C
T_j = 150 °C
r_F
T_j = 25 °C
T_j = 150 °C
I_RRM
Q_rr
E_rr
I_F = 150 A
T_j = 150 °C
di/dt_off = 3100 A/µs
V_GE = ±15 V
T_j = 150 °C
V_CC = 600 V
T_j = 150 °C
R_th(j-c)
per Diode
Module
L_CE
R_CC'+EE'
R_th(c-s)
M_s
M_t
terminal-chip
per module
to heat sink M6
T_C = 25 °C
T_C = 125 °C
to terminals M5
w
min.
typ.
max. Unit
180
ns
42
ns
19.2
mJ
410
ns
72
ns
15.8
mJ
0.19 K/W
2.14
2.46
V
2.07
2.38
V
1.3
1.5
V
0.9
1.1
V
5.6
6.4
mΩ
7.8
8.5
mΩ
120
A
31.3
µC
mJ
0.31 K/W
2.14
2.46
V
2.07
2.38
V
1.3
1.5
V
0.9
1.1
V
5.6
6.4
mΩ
7.8
8.5
mΩ
120
A
31.3
µC
13
mJ
0.31 K/W
30
nH
0.65
mΩ
1
mΩ
0.04
0.05 K/W
3
5
Nm
2.5
5
Nm
Nm
160
g
GAL
2
Rev. 2 – 23.06.2010
© by SEMIKRON