SKM145GB123D_07 Datasheet, PDF (2/6 Pages) Semikron International – IGBT Modules

SKM 145GB123D
SEMITRANS^® 2
IGBT Modules
SKM 145GB123D
SKM 145GAL123D
Features
 ^{     }
 ^{     }
 ^{    }
 ^{!      }
     
 ^{    "! #}
   $ % &_{ }
 ^{' #}
 ^{( ) #   *+ }
 ^{&   "   }
,*- , *  -  
 ^{   ./   }
    0/ 
Typical Applications
 ^{   #   }
 ^{+*   }
Characteristics
Symbol Conditions
Inverse Diode
( ² 5*
&_{( } 2 .// += _;5 2 /
(/
₍
&_::
H_
5_
&₍ 2 .// +
L 2 ./// +L@
;5 ^{2 / =} ** ^{2 $//}
:_{ 6',}
 
Freewheeling Diode
( ² 5*
&_{( } 2 .3/ += _;5 2 /
(/
₍
&_::
H_
5_
:_{ 6'(,}
Module
_*5
:_**NE55N
&₍ 2 .3/ +
;5 ^{2 / =} ** ^{2 $//}
 
C  '
:_{ '}



 
   O $
   3
min.
1₆ 2 03 4*_{ C}
1₆ 2 .03 4*_{ C}
1₆ 2 03 4*
1₆ 2 .03 4*
1₆ 2 03 4*
1₆ 2 .03 4*
1₆ 2 03 4*
1₆ 2 03 4*_{ C}
1₆ 2 .03 4*_{ C}
1₆ 2 03 4*
1₆ 2 .03 4*
1₆ 2 03 4*
1₆ 2 .03 4*
1₆ 2 03 4*
1_2 03 4*
1_2 .03 4*
A
03
typ.
0
.9
..
B
A3
3
0
.9
..
B
33
9
/D3
.
max. Units
03
.8
..
F
F
+
@*
J
/A$ KLM
03
.8
..
+
@*
J
/A
KLM
A/

F
F
//3 KLM
3

3

.$/

This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
GAL
2
25-04-2007 SEI
© by SEMIKRON