SKM145GB066D Datasheet, PDF (2/6 Pages) Semikron International – Trench IGBT Modules

SKM 145GB066D
SEMITRANS^® 2
Trench IGBT Modules
SKM 145GB066D
Preliminary Data
Characteristics
Symbol Conditions
Inverse Diode
_E  _
$_E  +-2 %8 _9  2 
_E2
_E
$_;;B
H_
_
;_{ 40 &}
Module
O_
;_P3P
$_E  +-2 %
*K*  ,+22 %K7
_9  0A 8 _  :22 
 **
/!  0 
;_{  0}
B_
B_

 *
   = B"
   B-
₄  ,- . _/
₄  +-2 . _/
₄  ,- .
₄  ,- .
₄  +-2 .
 _ ,- .
 _ +,- .
min.
:
,!-
typ.
+!1
2!@-
:
@2
,2
:!-
2!?-
+
max. Units
+!"


+

1
F
%
7
J
2!-
MKN
:2

F
F
2!2- MKN
-
Q
-
Q
+-2

Features
 ^{      }
 ^  ^{   }
 
 ^{      ! }
  " # $_
Typical Applications
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
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Remarks
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+,-.  #!  / _  012 ///
3+-2.! *  /   *
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₄+-2.8  5:"2!   
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GB
2
28-03-2007 RAA
© by SEMIKRON