SKM100GB17E4 Datasheet, PDF (2/5 Pages) Semikron International – IGBT4 Modules

SKM100GB17E4
SEMITRANS^® 2
IGBT4 Modules
SKM100GB17E4
Features
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. Generation
CAL-Diode
• Insulated copper baseplate using DBC
Technology (Direct Copper Bonding)
• With integrated Gate resistor
• For switching frequenzies up to 8kHz
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
• Wind power
• Public transport
Remarks
• Case temperature limited
to T_c = 125°C max.
• Recommended T_op = -40 ... +150°C
• Product reliability results valid
for T_j = 150°C
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC
I_F = 100 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_F0
chiplevel
T_j = 25 °C
T_j = 150 °C
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
chiplevel
T_j = 25 °C
T_j = 150 °C
I_F = 100 A
T_j = 150 °C
di/dt_off = 2360 A/µs
V_GE = -15 V
T_j = 150 °C
V_CC = 1200 V
T_j = 150 °C
per diode
Module
L_CE
R_CC'+EE'
terminal-chip
T_C = 25 °C
T_C = 125 °C
R_th(c-s)
per module
M_s
to heat sink M6
M_t
to terminals M5
w
min.
typ.
max. Unit
2.00
2.40
V
2.15
2.57
V
1.32
1.56
V
1.08
1.22
V
6.8
8.4
mΩ
11
14
mΩ
86
A
34
µC
26
mJ
0.504 K/W
30
nH
0.65
mΩ
1.09
mΩ
0.04
0.05 K/W
3
5
Nm
2.5
5
Nm
Nm
160
g
GB
2
Rev. 4.0 – 24.06.2015
© by SEMIKRON