SKM100GB176D_09 Datasheet, PDF (2/6 Pages) Semikron International – Trench IGBT Modules

SKM 100GB176D
SEMITRANS^® 2
Trench IGBT Modules
SKM 100GB176D
Features
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Typical Applications
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Characteristics
Symbol Conditions
Inverse Diode
₌  _
%_{= }  )( &9 _7  + 
₀  .( /_{ -}
₀  2.( /_{ -}
₌₊
₀  .( /
₀  2.( /
₌
₀  .( /
₀  2.( /
%₅₅₆
C_
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_7  *2( 9 _  2.++ 
5_0*K
Module
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min.
@
."(
typ.
2"#
2"#
2"2
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#")
4"@
)3"(
.4"#
.2">
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2
max. Units
2"4

2"4

2"@

2"2

3
A
22
A
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F
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A
A
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N
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N
2#+

This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
06-10-2009 NOS
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