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SKM100GB176D Datasheet, PDF (2/6 Pages) Semikron International – Trench IGBT Modules
SKM 100GB176D
SEMITRANS® 2
Trench IGBT Modules
SKM 100GB176D
Preliminary Data
Features
   
        
         
  
     !" 
   # $ %
Typical Applications
 &     '  ()( *
)(+  &
 , !    $  -
Characteristics
Symbol Conditions
Inverse Diode
=  
%=   )( &9 7  + 
0  .( / -
0  2.( / -
=+
0  .( /
0  2.( /
=
0  .( /
0  2.( /
%556
C

%=   )( &
'D'  2#(+ &D<
0  2.( /
H  .+ 
7  *2( 9   2.++ 
50*L
Module
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H
5M?M
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  .( /
  2.( /
5* 
6
  ' 
    N 6#
6
    6(

min.
@
."(
typ.
2"#
2"#
2"2
+"4
#")
4"@
)3"(
.4"#
.2">
+")(
2
max. Units
2"4

2"4

2"@

2"2

3
A
22
A
&
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G
+">( JDK
@+

A
A
+"+( JDK
(
O
(
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This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
09-03-2007 RAA
© by SEMIKRON