SKM100GB12T4_09 Datasheet, PDF (2/5 Pages) Semikron International – Fast IGBT4 Modules

SKM100GB12T4
SEMITRANS^®2
Fast IGBT4 Modules
SKM100GB12T4
Features
• IGBT4 = 4. Generation (Trench)IGBT
• VCEsat with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x I_CNOM
• Soft switching 4. Generation CAL
diode (CAL4)
Typical Applications
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC
I_F = 100 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 150 °C
V_F0
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
I_F = 100 A
T_j = 150 °C
di/dt_off = 1600 A/µs
V_GE = ±15 V
T_j = 150 °C
V_CC = 600 V
T_j = 150 °C
per diode
Module
L_CE
R_CC'+EE'
terminal-chip
T_C = 25 °C
T_C = 125 °C
R_th(c-s)
M_s
M_t
per module
to heat sink M6
to terminals M5
w
min.
typ.
max. Unit
2.2
2.52
V
2.15
2.47
V
1.3
1.5
V
0.9
1.1
V
9.0
10.2 mΩ
12.5
13.7 mΩ
54
A
15.7
µC
5.9
mJ
0.48 K/W
30
nH
0.65
mΩ
1
mΩ
0.04
0.05 K/W
3
5
Nm
2.5
5
Nm
Nm
160
g
GB
2
Rev. 0 – 10.03.2009
© by SEMIKRON