SKM100GB125DN Datasheet, PDF (2/6 Pages) List of Unclassifed Manufacturers – SEMITRANSR M Ultra Fast IGBT Modules

SKM 100GB125DN
SEMITRANS^® 2N
Ultra Fast IGBT Module
Characteristics
Symbol Conditions
Inverse Diode
6_! 3 6_2$
!  ^{3 C4 %= 6};2 ^{3 + 6}
6_!+
_!
11:
I_
2_
1_)7D,&
Module
!  ^{3 C4 %}
M 3 9++ %M@
6_;2 3 + 6= 6_$$ 3 ++ 6
   
min.
(₇ 3 -4 5$_{ #B}
(₇ 3 *-4 5$_{ #B}
(₇ 3 5$
(₇ 3 5$
(₇ 3 *-4 5$
typ.
-
*9
**
*-
4+
**4
max. Units
-4
6
6
*-
6
*CH G
%
@$
K
+4
LMN
SKM 100GB125DN
Features
_$2
1_$$OF22O
 B   D
1_)D,
:_
:_

   
    / :
    :4
(_ 3 -4 5$
(_ 3 *-4 5$
H
-4
-+
-4

+C4
G
*
G
++4 LMN
4

4

*+

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Typical Applications
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
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GB
2
21-05-2007 RAA
© by SEMIKRON