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SKM100GB063D_06 Datasheet, PDF (2/6 Pages) Semikron International – Superfast NPT-IGBT Module | |||
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SKM 100GB063D
SEMITRANS® 2
Superfast NPT-IGBT
Module
SKM 100GB063D
Characteristics
Symbol Conditions
Inverse Diode
(* 6 (') *
6 .// -B (' 6 / (
9 6 07 8)
,&
9 6 .07 8)
,&
(*/
9 6 .07 8)
*
>>?
J
'
*
6 .// -
9 6 .07 8)
9 6 .07 8)
(' 6 .7 (B ()) 6 <// (
>9P
Module
!
!
)'
>))QH''Q
&
6 07 8)
6 .07 8)
>
!
?
4 ?;
?
?7
min.
<
07
typ.
.77
.77
F
GG
;
/=7
.
max. Units
.O
(
(
/O
(
./
I
-
E)
L
/;
M2N
</
"
I
I
//7 M2N
7
7
.;/
Features
!
!
"
#$
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!
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&
%%&
% ()'
(
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)
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)
%
* +
% ,
)- !
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./ !
!
0/
Typical Applications
%
!
!
1
,
%
,
2
-)
!
%
3
#
,
./
4"5
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
05-09-2006 SEN
© by SEMIKRON
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