SKM100GAL12T4 Datasheet, PDF (2/5 Pages) Semikron International – Fast IGBT4 Modules

SKM100GAL12T4
SEMITRANS^® 2
Fast IGBT4 Modules
SKM100GAL12T4
Features
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
• UL recognized, file no. E63532
Typical Applications*
• DC/DC – converter
• Brake chopper
• Switched reluctance motor
• DC – motor
Remarks
• Case temperature limited to
T_c = 125°C max, recomm.
T_op = -40 ... +150°C, product
rel. results valid for T_j = 150°
Characteristics
Symbol
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
Conditions
V_CC = 600 V
T_j = 150 °C
I_C = 100 A
V_GE = ±15 V
R_{G on} = 1 Ω
T_j = 150 °C
T_j = 150 °C
R_{G off} = 1 Ω
T_j = 150 °C
di/dt_on = 1800 A/µs T_j = 150 °C
di/dt_off = 1130 A/µs _{Tj = 150 °C}
R_th(j-c)
per IGBT
Inverse diode
V_F = V_EC
I_F = 100 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 150 °C
V_F0
T_j = 25 °C
T_j = 150 °C
r_F
T_j = 25 °C
T_j = 150 °C
I_RRM
Q_rr
E_rr
I_F = 100 A
T_j = 150 °C
di/dt_off = 1600 A/µs
V_GE = ±15 V
T_j = 150 °C
V_CC = 600 V
T_j = 150 °C
R_th(j-c)
per diode
Freewheeling diode
V_F = V_EC
I_F = 100 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 150 °C
V_F0
T_j = 25 °C
T_j = 150 °C
r_F
T_j = 25 °C
T_j = 150 °C
I_RRM
Q_rr
E_rr
I_F = 100 A
T_j = 150 °C
di/dt_off = 1600 A/µs
V_GE = ±15 V
T_j = 150 °C
V_CC = 600 V
T_j = 150 °C
R_th(j-c)
per Diode
Module
L_CE
R_CC'+EE'
R_th(c-s)
M_s
M_t
terminal-chip
per module
to heat sink M6
T_C = 25 °C
T_C = 125 °C
to terminals M5
w
min.
typ.
max. Unit
165
ns
47
ns
15
mJ
400
ns
75
ns
10.2
mJ
0.27 K/W
2.20
2.52
V
2.15
2.47
V
1.3
1.5
V
0.9
1.1
V
9.0
10.2 mΩ
12.5
13.7 mΩ
54
A
15.7
µC
5.9
mJ
0.48 K/W
2.20
2.52
V
2.15
2.47
V
1.3
1.5
V
0.9
1.1
V
9.0
10.2 mΩ
12.5
13.7 mΩ
165
A
15.7
µC
5.9
mJ
0.48 K/W
30
nH
0.65
mΩ
1
mΩ
0.04
0.05 K/W
3
5
Nm
2.5
5
Nm
Nm
160
g
GAL
2
Rev. 0 – 08.03.2010
© by SEMIKRON