SKIM606GD066HD Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SKiM606GD066HD
SKiM^® 63
Trench IGBT Modules
SKiM606GD066HD
Features
• IGBT 3 Trench Gate Technology
• Solderless sinter technology
• V_CE(sat) with positive temperature
coefficient
• Low inductance case
• Isolated by Al₂O₃ DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts and electrical
contacts
• High short circuit capability, self
limiting to 6 x I_C
• Integrated temperature sensor
Typical Applications
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC
I_F = 600 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 150 °C
V_F0
r_F
I_RRM
Q_rr
E_rr
R_th(j-s)
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
I_F = 600 A
T_j = 150 °C
di/dt_off = 5600 A/µs
V_GE = -15 V
T_j = 150 °C
V_CC = 300 V
T_j = 150 °C
per diode
Module
L_CE
R_CC'+EE'
terminal-chip
T_s = 25 °C
T_s = 125 °C
M_s
to heat sink (M4)
M_t
to terminals (M6)
w
Temperature sensor
R₁₀₀
B_100/125
T_Sensor = 100 °C (R₂₅ = 5 kΩ)
R_(T) = R₁₀₀exp[B_100/125(1/T-1/373)];
T[K];
min.
2.5
3
typ.
1.6
1.7
1
0.85
1.0
1.4
390
85
21
9
0.3
0.5
339
4096
max. Unit
1.9
V
1.9
V
1.1
V
0.95
V
1.3
mΩ
1.6
mΩ
A
µC
mJ
0.209 K/W
13
nH
mΩ
mΩ
4
Nm
5
Nm
Nm
750
g
Ω
K
GD
2
Rev. 2 – 26.08.2009
© by SEMIKRON