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SKIM459GD12E4 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules | |||
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SKiM459GD12E4
SKiM® 93
Trench IGBT Modules
SKiM459GD12E4
Features
⢠IGBT 4 Trench Gate Technology
⢠Solderless sinter technology
⢠VCE(sat) with positive temperature
coefficient
⢠Low inductance case
⢠Isolated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
⢠Pressure contact technology
forthermal contacts and
electricalcontacts
⢠High short circuit capability, self
limiting to 6 x IC
⢠Integrated temperature sensor
Typical Applications
⢠Automotive inverter
⢠High reliability AC inverter wind
⢠High reliability AC inverter drives
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 450 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0
rF
IRRM
Qrr
Err
Rth(j-s)
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
IF = 450 A
Tj = 150 °C
di/dtoff = 8880 A/µs
VGE = -15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
per diode
Module
LCE
RCC'+EE'
terminal-chip
Ts = 25 °C
Ts = 125 °C
Ms
to heat sink (M4)
Mt
to terminals (M6)
w
Temperature sensor
R100
B100/125
TSensor = 100 °C (R25 = 5 kâ¦)
R(T) = R100exp[B100/125(1/T-1/373)];
T[K];
min.
2.5
3
typ.
2.1
2.1
1.3
0.9
1.9
2.6
570
80
40
10
0.3
0.5
339
4096
max. Unit
2.5
V
2.4
V
1.5
V
1.1
V
2.1
mâ¦
2.8
mâ¦
A
µC
mJ
0.155 K/W
15
nH
mâ¦
mâ¦
4
Nm
5
Nm
Nm
1100
g
â¦
K
GD
2
Rev. 2 â 26.08.2009
© by SEMIKRON
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