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SKIM406GD066HD_11 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules | |||
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SKiM406GD066HD
SKiM® 63
Trench IGBT Modules
SKiM406GD066HD
Features
⢠IGBT 3 Trench Gate Technology
⢠Solderless sinter technology
⢠VCE(sat) with positive temperature
coefficient
⢠Low inductance case
⢠Isolated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
⢠Pressure contact technology for
thermal contacts and electrical
contacts
⢠High short circuit capability, self limiting
to 6 x IC
⢠Integrated temperature sensor
Typical Applications*
⢠Automotive inverter
⢠High reliability AC inverter wind
⢠High reliability AC inverter drives
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 400 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0
rF
IRRM
Qrr
Err
Rth(j-s)
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
IF = 400 A
Tj = 150 °C
di/dtoff = 5900 A/µs
VGE = -15 V
VCC = 300 V
Tj = 150 °C
Tj = 150 °C
per diode
Module
LCE
RCC'+EE'
terminal-chip
Ts = 25 °C
Ts = 125 °C
w
Temperature sensor
R100
B100/125
TSensor = 100 °C (R25 = 5 kï)
R(T) = R100exp[B100/125(1/T-1/373)];
T[K];
min.
0.9
0.75
1.0
1.5
typ.
1.5
1.6
1
0.85
1.3
1.8
350
49
12
9
0.3
0.5
761
339
4096
max. Unit
1.8
V
1.8
V
1.1
V
0.95
V
1.7
mï
2.2
mï
A
µC
mJ
0.243 K/W
13
nH
mï
mï
g
ï
K
GD
2
Rev. 4 â 15.07.2011
© by SEMIKRON
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