SKIM306GD12E4_11 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SKiM306GD12E4
SKiM^® 63
Trench IGBT Modules
SKiM306GD12E4
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
• V_CE(sat) with positive temperature
coefficient
• Low inductance case
• Isolated by Al₂O₃ DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts and electrical
contacts
• High short circuit capability, self limiting
to 6 x I_C
• Integrated temperature sensor
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC
I_F = 300 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 150 °C
V_F0
r_F
I_RRM
Q_rr
E_rr
R_th(j-s)
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
I_F = 300 A
T_j = 150 °C
di/dt_off = 8000 A/µs
V_GE = -15 V
V_CC = 600 V
T_j = 150 °C
T_j = 150 °C
per diode
Module
L_CE
R_CC'+EE'
terminal-chip
T_s = 25 °C
T_s = 125 °C
w
Temperature sensor
R₁₀₀
B_100/125
T_Sensor = 100 °C (R₂₅ = 5 k)
R_(T) = R₁₀₀exp[B_100/125(1/T-1/373)];
T[K];
min.
1.1
0.7
2.2
3.3
typ.
2.1
2.1
1.3
0.9
2.8
3.9
448
47
21
9
0.3
0.5
761
339
4096
max. Unit
2.5
V
2.4
V
1.5
V
1.1
V
3.2
m
4.3
m
A
µC
mJ
0.218 K/W
13
nH
m
m
g

K
GD
2
Rev. 3 – 14.07.2011
© by SEMIKRON