SK75GD066T_07 Datasheet, PDF (2/5 Pages) Semikron International – IGBT Module

SK75GD066T
SEMITOP^® 4
IGBT Module
SK75GD066T
Characteristics
Symbol Conditions
Inverse Diode
2_ 6 2_*
  6 0: +> 2_( 6 : 2
2_:

<<
N

_  6 45 +
L 6 #F:: +LA
2_**6 $::2
<_C8ED.
  
_
  1

Temperature sensor
<_!::
 6 !::7* C<_#5651HD
min. typ.
₈ 6 #5 7* _%3
8 6 !5: 7* _%3
8 6 #5 7*
₈ 6 !5: 7*
₈ 6 #5 7*
₈ 6 !5: 7*
₈ 6 !#5 7*
!"$5
!"$!
:";5
4";
$5
!:
!"F
!"#
0:
FB$=5O
max. Units
2
2
2
2
H
H
+
A*
K
ML-
$"5
/

H
Target Data
Features
 ^{      }
 ^{  }
 !"#"$
 ^{ %    &  }
  '  
 ^{  ()    }
 ^{*+,     -.}
 ^{  /*   }

Typical Applications
 ^{%    !0 12+}
 ^{3     4"5 1-}
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GD-T
2
14-09-2007 DIL
© by SEMIKRON