SK50GD066ET_07 Datasheet, PDF (2/3 Pages) Semikron International – IGBT Module

SK50GD066ET
SEMITOP^® 3
IGBT Module
SK50GD066ET
Target Data
Characteristics
Symbol Conditions
Inverse Diode
-_& 0 -_5
!_& 0 2+ $? -_"5 0 + -
-_&+
_&
!_;;<
L_
5_
!_& 0 2+ $
-_0 >++-
;_7C
  
<_
   ,

Temperature sensor
;_*++
 ^{0*++3 ;}12^02,G
min. typ. max. Units
7 ^{0 12 3}  ).
7 ^{0 *2+ 3}  ).
7 ^{0 12 3}
7 ^{0 *2+ 3}
7 ^{0 12 3}
7 ^{0 *2+ 3}
7 ^{0 *2+ 3}
*42
-
*42
-
*
*4*
-
+4F
*
-
*+
*1
G
*1
*/
G
$
B
I
*4:
JK'
1412
142
(
>+

/F>=2M
G
Features
 ^{   }
 ^{    }
 ^{       }
      
    
 ^{   !"  #}
 ^{$%  # &'}
 ^{!    (     }
 
Typical Applications
 ^{!)     *+ ,-$}
 ^{#.    / ,'}
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GD-ET
2
05-09-2007 DIL
© by SEMIKRON