SK35DGDL12T4ETE2 Datasheet, PDF (2/6 Pages) Semikron International – 3-phase bridge rectifer

SK35DGDL12T4ETE2
SEMITOP^®E2
3-phase bridge rectifer +
brake chopper + 3-phase
bridge inverter
Engineering Sample
SK35DGDL12T4ETE2
Target Data
Features
• Low inductive design
• Press-Fit contact technology
• Rugged mounting due to integrated
mounting clamps
• Heat transfer and insulation through
direct copper bonded aluminium oxide
ceramic (DBC)
• Trench4 IGBT technology
• Robust and soft freewheeling diode
CAL4F technology
• UL recognized file no. E 63 532
• Integrated NTC temperature sensor
Typical Applications*
• Inverter up to 30kVA
• Typical motor power 15kW
Remarks
• IGBT1: inverter IGBT
• IGBT2: brake IGBT
• Diode1: rectifier diode section
• Diode2: APD inverter
• Diode3: FWD brake
Absolute Maximum Ratings
Symbol Conditions
Diode 3
V_RRM
I_F
I_Fnom
I_FRM
I_FSM
T_j
T_j = 25 °C
T_j = 175 °C
T_s = 25 °C
T_s = 70 °C
I_FRM = 3 x I_Fnom
10 ms, sin 180°, T_j = 150 °C
Absolute Maximum Ratings
Symbol Conditions
Module
I_t(RMS)
T_stg
V_isol
T_terminal = 100 °C, T_S = 60°C
AC, sinusoidal, t = 1 min
Characteristics
Symbol Conditions
IGBT 1
V_CE(sat)
V_CE0
r_CE
V_GE(th)
I_CES
C_ies
C_oes
C_res
Q_G
R_Gint
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
R_th(j-s)
I_C = 35 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
chiplevel
T_j = 25 °C
T_j = 150 °C
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_GE = V_CE, I_C = 1.2 mA
V_GE = 0 V
V_CE = 1200 V
T_j = 25 °C
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
- 8 V...+ 15 V
T_j = 25 °C
V_CC = 600 V
I_C = 35 A
R_{G on} = 12 Ω
R_{G off} = 12 Ω
V_{GE neg} = -7 V
V_{GE pos} = 15 V
per IGBT
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
Values
1200
38
30
35
105
170
-40 ... 175
Values
t.b.d.
-40 ... 125
2500
Unit
V
A
A
A
A
A
°C
Unit
A
°C
V
min.
5
typ.
1.85
2.25
0.80
0.70
30
44
5.8
-
1.95
0.155
0.115
270
0
3.15
3.2
1.2
max. Unit
2.10
V
2.45
V
0.90
V
0.80
V
34
mΩ
47
mΩ
6.5
V
-
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
DGDL-ET
2
Rev. 0.3 – 09.02.2017
© by SEMIKRON