SEMIX854GB176HD_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX 854GB176HD
SEMiX^® 4
Trench IGBT Modules
Characteristics
Symbol Conditions
Inverse Diode
₌  _
₌₍
₌
1₄₄₅
F_
_
1_{= }  A(( "9 _7  ( 
1_{= }  A(( "
#J#  2((( "J<
_.  )+ ,_{ @}
_.  ')+ ,_{ @}
_.  )+ ,
_.  ')+ ,
_.  )+ ,
_.  ')+ ,
_.  ')+ ,
_7  B'+ 9 _  ')(( 
4_.BL
Module
  ##
min.
typ. max. Units
'-0
'-?

'-0
'-?

'-'
'->

(-?
'-'

'
D
'->
D
0>(
"
))(
<
'0(
G
(-(2' IJK
SEMiX 854GB176HD
Preliminary Data
Features
 ^{  }
 ^{       }
 ^ ^{    }
  
 ^{   !}
Typical Applications
M_
4_NCN
 @-   B
_  )+ ,
_  ')+ ,
4_B
  #
5
    O 5+
5_
    5A

Temperature sensor
4_'((
H_'((J')+
_'((, 4₎₊+ OD
44_'(( 6QH_'((J')+'JB'J_'((R9
QIR9 H
))

(-0
D
'
D
(-(>
IJK
>
+
*
)-+
+
*
3((

(-3?>8+P
OD
>++(8)P
I
 ^{"     #} 
 ^$%
 ^{    # }
Remarks
 ^{  !    # &}
_'(((    
      # &
_')((
 ^{*   # }
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
18-04-2007 SCH
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