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SEMIX854GB176HDS_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules
SEMiX 854GB176HDs
SEMiX® 4s
Trench IGBT Modules
Characteristics
Symbol Conditions
Inverse Diode
<  
<(
<
0334
E

0<   @(( "8 6  ( 
0<   @(( "
#I#  1((( "I;
-  )* + ?
-  ')* + ?
-  )* +
-  ')* +
-  )* +
-  ')* +
-  ')* +
6  A'* 8   ')(( 
3-AK
Module
  ##
min.
typ. max. Units
',/
',>

',/
',>

','
',=

(,>
','

'
C
',=
C
/=(
"
))(
;
'/(
F
(,(1' HIJ
SEMiX 854GB176HDs
Preliminary Data
Features
   
        
         
  
     !
Typical Applications
L
3MBM
 ?,   A
  )* +
  ')* +
3A 
  # 
4
    N 4*
4
    4@

Temperature sensor
3'((
G'((I')*
'((+ 3)** NC
33'(( 5QG'((I')*'IA'I'((R8
QHR8 G
))

(,/
C
'
C
(,(=
HIJ
=
*
O
),*
*
O
2((

(,2>=7*P
NC
=**(7)P
H
 "     #
 $%
     # 
Remarks
    !    # &
'(((    
      # &
')((
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
18-04-2007 SCH
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