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SEMIX854GB176HDS_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules | |||
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SEMiX 854GB176HDs
SEMiX® 4s
Trench IGBT Modules
Characteristics
Symbol Conditions
Inverse Diode
<
<(
<
0334
E
0<
@(( "8 6 (
0<
@(( "
#I# 1((( "I;
- )* + ?
- ')* + ?
- )* +
- ')* +
- )* +
- ')* +
- ')* +
6 A'* 8 ')((
3-AK
Module
##
min.
typ. max. Units
',/
',>
',/
',>
','
',=
(,>
','
'
C
',=
C
/=(
"
))(
;
'/(
F
(,(1' HIJ
SEMiX 854GB176HDs
Preliminary Data
Features
!
Typical Applications
L
3MBM
?,
A
)* +
')* +
3A
#
4
N 4*
4
4@
Temperature sensor
3'((
G'((I')*
'((+ 3)** NC
33'(( 5QG'((I')*'IA'I'((R8
QHR8 G
))
(,/
C
'
C
(,(=
HIJ
=
*
O
),*
*
O
2((
(,2>=7*P
NC
=**(7)P
H
"
#
$%
#
Remarks
! # &
'(((
# &
')((
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
18-04-2007 SCH
© by SEMIKRON
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