SEMIX754GB128DS_08 Datasheet, PDF (2/5 Pages) Semikron International – SPT IGBT Modules

SEMiX754GB128Ds
SEMiX^®4s
SPT IGBT Modules
SEMiX754GB128Ds
Preliminary Data
Features
• Homogeneous Si
• SPT = Soft-Punch-Through technology
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Electronic welders up to 20 kHz
Remarks
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC
I_Fnom = 400A
V_GE = 0V
chiplevel
T_j = 25°C
T_j = 125°C
V_F0
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)D
I_Fnom = 400A
di/dt_off = 5800A/µs
V_GE = -15V
V_CC = 600V
per diode
T_j = 25°C
T_j = 125°C
T_j = 25°C
T_j = 125°C
T_j = 125°C
T_j = 125°C
T_j = 125°C
Module
L_CE
R_CC'+EE'
res., terminal-chip ^{TC = 25°C}
T_C = 125°C
R_th(c-s)
M_s
M_t
w
per module
to heat sink (M5)
to terminals (M6)
Temperature sensor
R₁₀₀
T_c=100°C (R₂₅=5 kΩ)
B_100/125
R_(T)=R₁₀₀exp[B_100/125(1/T-1/T₁₀₀)];
T[K];
min.
typ.
max. Unit
2.0
2.5
V
1.8
2.3
V
0.75
1.1
1.45
V
0.5
0.85
1.2
V
1.9
2.3
2.6
mΩ
2.0
2.4
2.8
mΩ
365
A
58
µC
22
mJ
0.082 K/W
22
nH
0.7
mΩ
1
mΩ
0.03
K/W
3
5
Nm
2.5
5
Nm
400
g
0,493
±5%
kΩ
3550
±2%
K
GB
2
03.04.2008
© by SEMIKRON