SEMIX653GD176HDC_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX 653GD176HDc
SEMiX^® 33c
Trench IGBT Modules
Characteristics
Symbol Conditions
Inverse Diode
₌  _
₌₎
₌
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C_
_
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%_{= }  4+) 2
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_.  (*+ ,_{ >}
_.  *+ ,
_.  (*+ ,
_.  *+ ,
_.  (*+ ,
_.  (*+ ,
_7  ?(+ 9 _  (*)) 
$_.?I
Module
  &&
min.
typ.
(-0
(-0
(-(
)-6
(-5
(-3
53)
(5)
05
max. Units
(-6

(-6

(-5

(-(

A
A
2
<
D
)-(( FGH
SEMiX 653GD176HDc
Preliminary Data
Features
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Typical Applications
J_
$_K@K
 >-   ?
_  *+ ,
_  (*+ ,
$_?
  &
"
    L "+
"_
    "1

Temperature sensor
$₍₎₎
E_())G(*+
_()), $_*++ LA
$$₍₎₎ #OE_())G(*+(G?(G₍₎₎P9
OFP9 E
*)

)-0
A
(
A
)-)(4
FGH
5
+
M
*-+
+
M
6))

)-4658+N
LA
5++)8*N
F
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Remarks
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_()))    
      & '
_(*))
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GD
2
20-04-2007 SCH
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