SEMIX653GB176HDS_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX 653GB176HDs
SEMiX^® 3s
Trench IGBT Modules
Characteristics
Symbol Conditions
Inverse Diode
_B  _
_B,
_B
4_""9
G_
_
4_{B }  7., '> _<  , 
4_{B }  7., '
#J#  7-,, 'JA
₁  -. /_{ C}
₁  +-. /_{ C}
₁  -. /
₁  +-. /
₁  -. /
₁  +-. /
₁  +-. /
_<  $+. > _  +-,, 
"_1$L
Module
  ##
min.
typ.
+03
+03
+0+
,0;
+08
+06
86,
+8,
38
max. Units
+0;

+0;

+08

+0+

E
E
'
A
H
,0++ IJK
SEMiX 653GB176HDs
SEMiX 653GAL176HDs
SEMiX 653GAR176HDs
Preliminary Data
Features
 ^{  }
 ^{       }
 ^ ^{    }
  
 ^{   !}
 ^{"   #  $%!  # &$'}
%(   
Typical Applications
 ^{'     #} 
 ^)%
 ^{    # }
Remarks
M_
"_NDN
 C0   $
_  -. /
_  +-. /
"_$
  #
9
    O 9.
9_
    95

Temperature sensor
"_+,,
(_+,,J+-.
_+,,/ "_-.. OE
""_+,, :Q(_+,,J+-.+J$+J_+,,R>
QIR> (
-,

,03
E
+
E
,0,7
IJK
8
.
&
-0.
.
&
8,,

,07;8=.P
OE
8..,=-P
I
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
 ^{  !    # *}
_+,,,    
      # *
_+-,,
GB
GAL
GAR
2
20-04-2007 SCH
© by SEMIKRON