SEMIX653GAL176HDS_10 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX653GAL176HDs
SEMiX^® 3s
Trench IGBT Modules
SEMiX653GAL176HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V_CE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Characteristics
Symbol
t_d(on)
t_r
E_on
t_d(off)
t_f
Conditions
V_CC = 1200 V
I_C = 450 A
R_{G on} = 3.6 Ω
R_{G off} = 3.6 Ω
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
E_off
T_j = 125 °C
R_th(j-c)
per IGBT
Inverse diode
V_F = V_EC
I_F = 450 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 125 °C
V_F0
T_j = 25 °C
T_j = 125 °C
r_F
T_j = 25 °C
T_j = 125 °C
I_RRM
Q_rr
E_rr
I_F = 450 A
T_j = 125 °C
di/dt_off = 4200 A/µs
V_GE = -15 V
T_j = 125 °C
V_CC = 1200 V
T_j = 125 °C
R_th(j-c)
per diode
Freewheeling diode
V_F = V_EC
I_F = 450 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 125 °C
V_F0
T_j = 25 °C
T_j = 125 °C
r_F
T_j = 25 °C
T_j = 125 °C
I_RRM
Q_rr
E_rr
I_F = 450 A
T_j = 125 °C
di/dt_off = 4200 A/µs
V_GE = -15 V
T_j = 125 °C
V_CC = 1200 V
T_j = 125 °C
R_th(j-c)
per diode
Module
L_CE
R_CC'+EE'
R_th(c-s)
M_s
M_t
res., terminal-chip ^{TC = 25 °C}
T_C = 125 °C
per module
to heat sink (M5)
to terminals (M6)
w
Temperatur Sensor
R₁₀₀
B_100/125
T_c=100°C (R₂₅=5 kΩ)
R_(T)=R₁₀₀exp[B_100/125(1/T-1/T₁₀₀)];
T[K];
min.
typ.
max. Unit
290
ns
90
ns
300
mJ
975
ns
190
ns
180
mJ
0.054 K/W
1.7
1.90
V
1.7
1.9
V
0.9
1.1
1.3
V
0.7
0.9
1.1
V
1.3
1.3
1.3
mΩ
1.8
1.8
1.8
mΩ
380
A
130
µC
73
mJ
0.11 K/W
1.7
1.9
V
1.7
1.9
V
0.9
1.1
1.3
V
0.7
0.9
1.1
V
1.3
1.3
1.3
mΩ
1.8
1.8
1.8
mΩ
380
A
130
µC
73
mJ
0.11 K/W
20
nH
0.7
mΩ
1
mΩ
0.04
K/W
3
5
Nm
2.5
5
Nm
Nm
300
g
493 ± 5%
Ω
3550
±2%
K
GAL
2
Rev. 1 – 24.06.2010
© by SEMIKRON