SEMIX604GB176HD_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX 604GB176HD
SEMiX^® 4
Trench IGBT Modules
Characteristics
Symbol Conditions
Inverse Diode
_>  _
_>(
_>
1₅₅₆
F_
_
1_{> }  4(( ": _8  ( 
1_{> }  4(( "
#J#  22(( "J=
_.  )+ ,_{ A}
_.  ')+ ,_{ A}
_.  )+ ,
_.  ')+ ,
_.  )+ ,
_.  ')+ ,
_.  ')+ ,
_8  B'+ : _  ')(( 
5_.BL
Module
  ##
min.
typ.
'-+
'-4+
'-'
(-@
'
'-?
+2(
'?'
@+
max. Units
'-0

'-2+

'-?

'-'

D
D
"
=
G
(-(3' IJK
SEMiX 604GB176HD
Preliminary Data
Features
 ^{  }
 ^{       }
 ^ ^{    }
  
 ^{   !}
Typical Applications
M_
5_NCN
 A-   B
_  )+ ,
_  ')+ ,
5_B
  #
6
    O 6+
6_
    62

Temperature sensor
5_'((
H_'((J')+
_'((, 5₎₊+ OD
55_'(( 7QH_'((J')+'JB'J_'((R:
QIR: H
))

(-0
D
'
D
(-(?
IJK
?
+
*
)-+
+
*
4((

(-4@?9+P
OD
?++(9)P
I
 ^{"     #} 
 ^$%
 ^{    # }
Remarks
 ^{  !    # &}
_'(((    
      # &
_')((
 ^{*   # }
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
20-04-2007 SCH
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