SEMIX604GB12T4S Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX 604GB12T4s
SEMiX^®4s
Trench IGBT Modules
Characteristics
Symbol Conditions
Inverse Diode
_B  _
_B.
_B
6_22:
G_
_
6_{B }  =.. "> _3  . 
6_{B }  =.. "
#I#  )(.. "IA
_-  () *_{ ,}
_-  '). *_{ ,}
_-  () *
_-  '). *
_-  () *
_-  '). *
_-  '). *
_3  C') > _  =.. 
2_-C/
Module
  ##
min.
typ.
(4')
(4.)
'4;
.48
'4D
'48
;8.
8D
;)
max. Units
(4D)

(4D

'4)

'4'

'4=
5
(4(
5
"
A
J
.4.9= LI&
SEMiX 604GB12T4s
Target Data
Features
 ^{  }
 ^{       }
 ^ ^{    }
  
 ^{   !}
Typical Applications
M_
2_NEN
 ,4   C
_  () *
_  '() *
2_C
  #
:
    O :)
:_
    :=

Temperature sensor
2_'..
K_'..I'()
_'..* 2₍₎) O5
22_'.. +RK_'..I'()'IC'I_'..S>
RLS
((

.47
5
'
5
.4.;
LI&
;
)
P
(4)
)
P
D..

.4D8;<)Q
O5
;)).<(Q
L
 ^{"     #} 
 ^$%
 ^{   & # }
Remarks
 ^{     # }
_'()* +,
 ^{%#  !    #}
 _-').*
 ^{/      }
  !    0
2_{3 4} '4.54
2_{3 4} '4.54
2₃₄₊(4(5 4
2_4+.4)5 
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
20-07-2007 SCH
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