SEMIX604GB126HDS_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX 604GB126HDs
SEMiX^®4s
Trench IGBT Modules
SEMiX 604GB126HDs
Preliminary Data
Features
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Typical Applications
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Remarks
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Characteristics
Symbol Conditions
Inverse Diode
_>  _
1_{> }  400 ": _7  0 
_.  () *_{ ,}
_.  '() *_{ ,}
_>0
_.  () *
_.  '() *
_>
_.  () *
_.  '() *
1₅₅₆
E_
_
1_{> }  400 "
#I#  9(00 "I=
_.  '() *
_7  A') : _  900 
5_.AJ
Module
  ##
K_
5_LBL
 ,-   A
_  () *
_  '() *
5_A
6
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Temperature sensor
5_'00
G_'00I'()
_'00* 5₍₎) MC
55_'00 +PG_'00I'()'IA'I_'00Q:
PHQ
min. typ.
'-9
'-9
'
0-3
'-)
(
4@)
'00
49
((
0-@
'
0-0?
?
(-)
0-42?8)O
?))08(O
max.
'-3
'-3
'-'
0-2
'-3
(-?
0-''
)
)
400
Units




C
C
"
=
F
HI&

C
C
HI&
N
N

MC
H
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
19-04-2007 SCH
© by SEMIKRON