SEMIX603GB066HD_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX 603GB066HD
SEMiX^®3
Trench IGBT Modules
Characteristics
Symbol Conditions
Inverse Diode
_?  _
$_{? }  4.. 6; _/  . 
_?.
_?
$_##!
D_
_
#_-3J
Module
$_{? }  4.. 6
%H%  :7.. 6H>
_/  37 ; _  :.. 
  %%
_-  '( )_{ *}
_-  &(. )_{ *}
_-  '( )
_-  &(. )
_-  '( )
_-  &(. )
_-  &(. )
min.
typ.
&08
&08
&
.07(
.04(
.0A
:(.
4:
&:
max. Units
&04

&04

&0&

.0A(

.07( B
&0&
B
6
>
E
.0&& GHI
SEMiX 603GB066HD
Preliminary Data
Features
 ^{  }
 ^{       }
 ^ ^{    }
  
Typical Applications
K_
#_L@L
 *0   3
_  '( )
_  &'( )
#_3
  %
!
    2 !(
!_
    !4

Temperature sensor
#_&..
F_&..H&'(
_&..) #_'(( 2B
##_&.. "OF_&..H&'(&H3&H_&..P;
OGP; F
'.

.05
B
&
B
.0.8
GHI
:
(
M
'0(
(
M
:..

.08A:9(N
2B
:((.9'N
G
 ^{!"    }
 ^{#    $   }
 ^{   $   }
Remarks
 ^{     % }
_&'() "*
 ^{+%  ,    %}
 _-&(.)
 ^{   #/  0}
2    3  %
,   % 
 ^{   % }
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
16-04-2007 SCH
© by SEMIKRON