SEMIX603GB066HDS_11 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX603GB066HDs
SEMiX^® 3s
Trench IGBT Modules
SEMiX603GB066HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V_CE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to T_C=125°C
max.
• Product reliability results are valid for
T_j=150°C
• For short circuit: Soft R_Goff
recommended
• Take care of over-voltage caused by
stray inductance
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC
I_F = 600 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 150 °C
V_F0
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
I_F = 600 A
T_j = 150 °C
di/dt_off = 3800 A/µs
V_GE = -8 V
V_CC = 300 V
T_j = 150 °C
T_j = 150 °C
per diode
Module
L_CE
R_CC'+EE'
res., terminal-chip
T_C = 25 °C
T_C = 125 °C
R_th(c-s)
M_s
M_t
per module
to heat sink (M5)
to terminals (M6)
min.
0.9
0.75
0.5
0.8
3
2.5
typ.
1.4
1.4
1
0.85
0.7
0.9
350
63
13
20
0.7
1
0.04
max.
1.60
1.6
1.1
0.95
0.8
1.1
0.11
5
5
w
Temperatur Sensor
R₁₀₀
T_c=100°C (R₂₅=5 k)
B_100/125
R_(T)=R₁₀₀exp[B_100/125(1/T-1/T₁₀₀)]; T[K];
300
493 ± 5%
3550
±2%
Unit
V
V
V
V
m
m
A
µC
mJ
K/W
nH
m
m
K/W
Nm
Nm
Nm
g

K
GB
2
Rev. 1 – 23.03.2011
© by SEMIKRON