SEMIX603GB066HDS_09 Datasheet, PDF (2/6 Pages) Semikron International – Trench IGBT Modules

SEMiX603GB066HDs
SEMiX^® 3s
Trench IGBT Modules
SEMiX603GB066HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V_CE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to T_C=125°C
max.
• Product reliability results are valid for
T_j=150°C
• For short circuit: Soft R_Goff
recommended
• Take care of over-voltage caused by
stray inductance
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC
I_F = 600 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 150 °C
V_F0
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
I_F = 600 A
T_j = 150 °C
di/dt_off = 3800 A/µs
V_GE = -8 V
T_j = 150 °C
V_CC = 300 V
T_j = 150 °C
per diode
Module
L_CE
R_CC'+EE'
res., terminal-chip ^{TC = 25 °C}
T_C = 125 °C
R_th(c-s)
M_s
M_t
per module
to heat sink (M5)
to terminals (M6)
w
Temperatur Sensor
R₁₀₀
B_100/125
T_c=100°C (R₂₅=5 kΩ)
R_(T)=R₁₀₀exp[B_100/125(1/T-1/T₁₀₀)];
T[K];
min.
typ.
max. Unit
1.4
1.60
V
1.4
1.6
V
0.9
1
1.1
V
0.75
0.85
0.95
V
0.5
0.7
0.8
mΩ
0.8
0.9
1.1
mΩ
350
A
63
µC
13
mJ
0.11 K/W
20
nH
0.7
mΩ
1
mΩ
0.04
K/W
3
5
Nm
2.5
5
Nm
Nm
300
g
493 ± 5%
Ω
3550
±2%
K
GB
2
Rev. 13 – 16.12.2009
© by SEMIKRON