SEMIX553GAR128DS_09 Datasheet, PDF (2/6 Pages) Semikron International – SPT IGBT Modules

SEMiX553GAR128Ds
SEMiX^® 3s
SPT IGBT Modules
SEMiX553GAR128Ds
Features
• Homogeneous Si
• SPT = Soft-Punch-Through technology
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders up to 20 kHz
Characteristics
Symbol Conditions
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
R_th(j-c)
V_CC = 600 V
I_C = 300 A
R_{G on} = 3 Ω
R_{G off} = 3 Ω
per IGBT
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
Inverse diode
V_F = V_EC
I_F = 300 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 125 °C
V_F0
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
T_j = 25 °C
T_j = 125 °C
T_j = 25 °C
T_j = 125 °C
I_F = 300 A
T_j = 125 °C
di/dt_off = 5400 A/µs
V_GE = -15 V
T_j = 125 °C
V_CC = 600 V
T_j = 125 °C
per diode
Freewheeling diode
V_F = V_EC
I_F = 300 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 125 °C
V_F0
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
T_j = 25 °C
T_j = 125 °C
T_j = 25 °C
T_j = 125 °C
I_F = 300 A
T_j = 125 °C
di/dt_off = 5400 A/µs
V_GE = -15 V
T_j = 125 °C
V_CC = 600 V
T_j = 125 °C
per diode
Module
L_CE
R_CC'+EE'
res., terminal-chip ^{TC = 25 °C}
T_C = 125 °C
R_th(c-s)
M_s
M_t
per module
to heat sink (M5)
to terminals (M6)
w
Temperatur Sensor
R₁₀₀
T_c=100°C (R₂₅=5 kΩ)
B_100/125
R_(T)=R₁₀₀exp[B_100/125(1/T-1/T₁₀₀)];
T[K];
min.
typ.
max. Unit
185
ns
65
ns
27
mJ
635
ns
80
ns
33
mJ
0.061 K/W
2.0
2.50
V
1.8
2.3
V
0.75
1.1
1.45
V
0.5
0.85
1.2
V
2.5
3.0
3.5
mΩ
2.7
3.2
3.7
mΩ
325
A
46
µC
17
mJ
0.11 K/W
2.0
2.5
V
1.8
2.3
V
0.75
1.1
1.45
V
0.5
0.85
1.2
V
2.5
3.0
3.5
mΩ
2.7
3.2
3.7
mΩ
325
A
46
µC
17
mJ
0.11 K/W
20
nH
0.7
mΩ
1
mΩ
0.04
K/W
3
5
Nm
2.5
5
Nm
Nm
300
g
493 ± 5%
Ω
3550
±2%
K
GAR
2
Rev. 9 – 16.12.2009
© by SEMIKRON