SEMIX503GD126HDC_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX 503GD126HDc
SEMiX^®33c
Trench IGBT Modules
SEMiX 503GD126HDc
Preliminary Data
Features
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Typical Applications
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Remarks
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Characteristics
Symbol Conditions
Inverse Diode
_>  _
1_{> }  500 ": _8  0 
_.  () *_{ ,}
_.  '() *_{ ,}
_>0
_.  () *
_.  '() *
_>
_.  () *
_.  '() *
1₆₆₇
E_
_
1_{> }  500 "
#I#  3A00 "I=
_.  '() *
_8  ?') : _  300 
6_.?J
Module
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K_
6_L@L
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Temperature sensor
6_'00
G_'00I'()
_'00* 6₍₎) MB
66_'00 +PG_'00I'()'I?'I_'00Q:
PHQ: G
min. typ.
'-3
'-3
'
0-4
(
(-C
200
CC
5(-)
(0
0-C
'
0-0'2
5
(-)
0-2A59)O
5))09(O
max.
'-4
'-4
'-'
0-A
(-5
5
0-'2
)
)
A00
Units




B
B
"
=
F
HI&

B
B
HI&
N
N

MB
H
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
19-04-2007 SCH
© by SEMIKRON