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SEMIX503GB126HD_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules | |||
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SEMiX 503GB126HD
SEMiX®3
Trench IGBT Modules
SEMiX 503GB126HD
Preliminary Data
Features
!
Typical Applications
"
#
$%
& #
Remarks
#
'()* +,
-
#
Characteristics
Symbol Conditions
Inverse Diode
?
2?
611 "; 9 1
/ () * ,
/ '() * ,
?1
/ () *
/ '() *
?
/ () *
/ '() *
2778
F
2?
611 "
#J# 4B11 "J>
/ '() *
9 @') ; 411
7/@K
Module
##
L
7MAM
,.
@
() *
'() *
7@
8
#
N 8)
8
84
Temperature sensor
7'11
H'11J'()
'11* 7()) NC
77'11 +PH'11J'()'J@'J'11Q;
PIQ; H
min. typ.
'.4
'.4
'
1.5
(
(.D
311
DD
6(.)
(1
1.D
'
1.13
6
(.)
1.3B6:)O
6))1:(O
max.
'.5
'.5
'.'
1.B
(.6
6
1.'6
)
)
611
Units
C
C
"
>
G
IJ&
C
C
IJ&
-
-
NC
I
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
19-04-2007 SCH
© by SEMIKRON
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