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SEMIX503GB126HD_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules
SEMiX 503GB126HD
SEMiX®3
Trench IGBT Modules
SEMiX 503GB126HD
Preliminary Data
Features
   
        
         
  
     !
Typical Applications
 "     #
 $%
    & # 
Remarks
       # 
'()* +,
 -   # 
Characteristics
Symbol Conditions
Inverse Diode
?  
2?   611 "; 9  1 
/  () * ,
/  '() * ,
?1
/  () *
/  '() *
?
/  () *
/  '() *
2778
F

2?   611 "
#J#  4B11 "J>
/  '() *
9  @') ;   411 
7/@K
Module
  ##
L
7MAM
 ,.   @
  () *
  '() *
7@ 
8
  # 
    N 8)
8
    84

Temperature sensor
7'11
H'11J'()
'11* 7()) NC
77'11 +PH'11J'()'J@'J'11Q;
PIQ; H
min. typ.
'.4
'.4
'
1.5
(
(.D
311
DD
6(.)
(1
1.D
'
1.13
6
(.)
1.3B6:)O
6))1:(O
max.
'.5
'.5
'.'
1.B
(.6
6
1.'6
)
)
611
Units




C
C
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>
G
IJ&

C
C
IJ&
-
-

NC
I
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
19-04-2007 SCH
© by SEMIKRON