SEMIX453GD176HDC_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX 453GD176HDc
SEMiX^® 33c
Trench IGBT Modules
Characteristics
Symbol Conditions
Inverse Diode
_<  _
_<)
_<
%_$$"
C_
_
%_{< }  4)) 28 _6  ) 
%_{< }  4)) 2
&G&  10)) 2G;
_.  *+ ,_{ =}
_.  (*+ ,_{ =}
_.  *+ ,
_.  (*+ ,
_.  *+ ,
_.  (*+ ,
_.  (*+ ,
_6  ?(+ 8 _  (*)) 
$_.?I
Module
  &&
min.
typ.
(-+
(-1+
(-(
)->
(-4
(-3
4+)
((+
5+
max. Units
(-0

(-5+

(-4

(-(

A
A
2
;
D
)-(( FGH
SEMiX 453GD176HDc
Preliminary Data
Features
 ^{  }
 ^{       }
 ^ ^{    }
  
 ^{   !}
Typical Applications
J_
$_K@K
 =-   ?
_  *+ ,
_  (*+ ,
$_?
  &
"
    L "+
"_
    "5

Temperature sensor
$₍₎₎
E_())G(*+
_()), $_*++ LA
$$₍₎₎ #OE_())G(*+(G?(G₍₎₎P8
OFP8 E
*)

)-0
A
(
A
)-)(1
FGH
4
+
M
*-+
+
M
>))

)-1>47+N
LA
4++)7*N
F
 ^{"#    }
 ^{$    %   }
 ^{   %   }
Remarks
 ^{  !    & '}
_()))    
      & '
_(*))
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GD
2
18-04-2007 SCH
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