|
SEMIX453GD12T4C Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules | |||
|
◁ |
SEMiX 453GD12T4c
SEMiX®33c
Trench IGBT Modules
Characteristics
Symbol Conditions
Inverse Diode
>
>.
>
1556
E
1>
?). ": 8 .
1>
?). "
#G# )... "G=
- () * ,
- '). * ,
- () *
- '). *
- () *
- '). *
- '). *
8 @') : 3..
5-@K
Module
##
min.
typ.
(/')
(/.)
'/7
./B
'/B
(/3
7).
2.
(4
max. Units
(/?)
(/?
'/)
'/'
(/'
C
(/B
C
"
=
H
./'' JG&
SEMiX 453GD12T4c
Target Data
Features
!
Typical Applications
L
5MAM
,/
@
() *
'() *
5@
#
6
N 6)
6
63
Temperature sensor
5'..
I'..G'()
'..* 5()) NC
55'.. +QI'..G'()'G@'G'..R:
QJR
(.
./2
C
'
C
./.'?
JG&
7
)
O
(/)
)
O
B..
./?B79)P
NC
7)).9(P
J
"
#
$%
& #
Remarks
#
'()* +,
%# ! #
-').*
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GD
2
02-10-2007 SCH
© by SEMIKRON
|
▷ |