SEMIX453GB12T4S Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX 453GB12T4s
SEMiX^®3s
Trench IGBT Modules
Characteristics
Symbol Conditions
Inverse Diode
_A  _
_A.
_A
6_22:
G_
_
6_{A }  B). "= _3  . 
6_{A }  B). "
#I#  )... "I@
_-  () *_{ ,}
_-  '). *_{ ,}
_-  () *
_-  '). *
_-  () *
_-  '). *
_-  '). *
_3  C') = _  8.. 
2_-C/
Module
  ##
min.
typ.
(4')
(4.)
'4;
.4E
'4E
(48
;).
7.
(9
max. Units
(4B)

(4B

'4)

'4'

(4'
5
(4E
5
"
@
J
.4'' LI&
SEMiX 453GB12T4s
SEMiX 453GAL12T4s
SEMiX 453GAR12T4s
Target Data
Features
 ^{  }
 ^{       }
 ^ ^{    }
  
 ^{   !}
Typical Applications
M_
2_NDN
 ,4   C
_  () *
_  '() *
2_C
  #
:
    O :)
:_
    :8

Temperature sensor
2_'..
K_'..I'()
_'..* 2₍₎) O5
22_'.. +RK_'..I'()'IC'I_'..S=
RLS
(.

.47
5
'
5
.4.B
LI&
;
)
P
(4)
)
P
;..

.4BE;<)Q
O5
;)).<(Q
L
 ^{"     #} 
 ^$%
 ^{   & # }
Remarks
 ^{     # }
_'()* +,
 ^{%#  !    #}
 _-').*
 ^{/      }
  !    0
2_{3 4} '4.54
2_{3 4} '4.54
2₃₄₊(4(5 4
2_4+.4)5 
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
GAL
GAR
2
27-09-2007 SCT
© by SEMIKRON