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SEMIX452GB176HDS_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules | |||
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SEMiX 452GB176HDs
Characteristics
Symbol Conditions
min. typ. max. Units
SEMiX® 2s
Trench IGBT Modules
>
>(
>
0445
E
4-@K
Module
0>
2(( ": 8 (
0>
2(( "
#I# 1*(( "I=
- )* + ?
- ')* + ?
- )* +
- ')* +
- )* +
- ')* +
- ')* +
8 @'* : ')((
##
',/
',B
',/
',B
','
',2
(,B
','
)
C
),/
C
27(
"
3*
=
17
F
(,'* HIJ
SEMiX 452GB176HDs
L
4MAM
?,
@
)* +
')* +
'3
(,/
C
'
C
4@
#
(,(1*
HIJ
Preliminary Data
5
N 5*
5
57
2
*
O
),*
*
O
Features
!
Typical Applications
"
#
$%
#
Remarks
! # &
'(((
# &
')((
Temperature sensor
4'((
G'((I')*
'((+ 4)** NC
44'(( 6QG'((I')*'I@'I'((R:
QHR: G
)*(
(,1B29*P
NC
2**(9)P
H
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
17-04-2007 SCH
© by SEMIKRON
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