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SEMIX452GB126HDS_08 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules | |||
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SEMiX452GB126HDs
SEMiX®2s
Trench IGBT Modules
SEMiX452GB126HDs
Preliminary Data
Features
⢠Homogeneous Si
⢠Trench = Trenchgate technology
⢠VCE(sat) with positive temperature
coefficient
⢠High short circuit capability
⢠UL recognised file no. E63532
Typical Applications
⢠AC inverter drives
⢠UPS
⢠Electronic Welding
Remarks
⢠Case temperatur limited to TC=125°C
max.
⢠Not for new design
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 300 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 125 °C
VF0
rF
IRRM
Qrr
Err
Rth(j-c)
Rth(j-s)
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
IF = 300 A
Tj = 125 °C
di/dtoff = 6200 A/µs
VGE = -15 V
Tj = 125 °C
VCC = 600 V
Tj = 125 °C
per diode
per diode
Module
LCE
RCC'+EE'
Rth(c-s)
Ms
Mt
res., terminal-chip TC = 25 °C
TC = 125 °C
per module
to heat sink (M5)
to terminals (M6)
w
Temperature sensor
R100
B100/125
Tc=100°C (R25=5 kâ¦)
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
min.
0.9
0.7
1.7
2.3
3
2.5
typ.
1.6
1.6
1
0.8
2.0
2.7
375
75
33
18
0.7
1
0.045
0,493
±5%
3550
±2%
max. Unit
1.8
V
1.8
V
1.1
V
0.9
V
2.3
mâ¦
3.0
mâ¦
A
µC
mJ
0.15 K/W
K/W
nH
mâ¦
mâ¦
K/W
5
Nm
5
Nm
Nm
250
g
kâ¦
K
GB
2
Rev. 16 â 02.12.2008
© by SEMIKRON
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