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SEMIX452GB126HDS_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules | |||
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SEMiX 452GB126HDs
SEMiX®2s
Trench IGBT Modules
SEMiX 452GB126HDs
SEMiX 452GAL126HDs
SEMiX 452GAR126HDs
Preliminary Data
Features
!
Typical Applications
"
#
$%
& #
Remarks
#
'()* +,
Characteristics
Symbol Conditions
Inverse Diode
>
1>
400 ": 8 0
. () * ,
. '() * ,
>0
. () *
. '() *
>
. () *
. '() *
1556
E
1>
400 "
#I# 7(00 "I=
. '() *
8 A') : 700
5.AJ
Module
##
K
5LBL
,-
A
() *
'() *
5A
6
#
M 6)
6
67
Temperature sensor
5'00
G'00I'()
'00* 5()) MC
55'00 +PG'00I'()'IA'I'00Q:
PHQ: G
min. typ.
'-7
'-7
'
0-3
(
(-@
4@)
@)
44
'3
0-@
'
0-02)
4
(-)
0-2?49)O
4))09(O
max.
'-3
'-3
'-'
0-?
(-4
4
0-')
)
)
()0
Units
C
C
"
=
F
HI&
C
C
HI&
N
N
MC
H
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
GAL
GAR
2
19-04-2007 SCH
© by SEMIKRON
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