SEMIX402GB066HD_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX 402GB066HD
SEMiX^®2
Trench IGBT Modules
Characteristics
Symbol Conditions
Inverse Diode
_>  _
$_{> }  ?.. 6: _/  . 
_>.
_>
$_##!
D_
_
#_-2J
Module
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%H%  85.. 6H=
_/  27 : _  8.. 
  %%
_-  '( )_{ *}
_-  &(. )_{ *}
_-  '( )
_-  &(. )
_-  '( )
_-  &(. )
_-  &(. )
min.
typ.
&3?
&3?
&
.37(
&
&3?
'(.
?5
&.
max. Units
&34

&34

&3&

.3@(

&3'( B
&34( B
6
=
E
.3&( GHI
SEMiX 402GB066HD
Preliminary Data
Features
 ^{  }
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 ^ ^{    }
  
Typical Applications
K_
#_LAL
 *3   2
_  '( )
_  &'( )
#_2
  %
!
    1 !(
!_
    !4

Temperature sensor
#_&..
F_&..H&'(
_&..) #_'(( 1B
##_&.. "OF_&..H&'(&H2&H_&..P:
OGP: F
&7

.35
B
&
B
.3.?(
GHI
8
(
M
'3(
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'(.

.3?@89(N
1B
8((.9'N
G
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Remarks
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_&'() "*
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This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
16-04-2007 SCH
© by SEMIKRON