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SEMIX402GB066HDS_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules | |||
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SEMiX 402GB066HDs
SEMiX®2s
Trench IGBT Modules
Characteristics
Symbol Conditions
Inverse Diode
>
$>
?.. 6: / .
>.
>
$##!
D
#-1J
Module
$>
?.. 6
%H% 85.. 6H=
/ 17 : 8..
%%
- '( ) *
- &(. ) *
- '( )
- &(. )
- '( )
- &(. )
- &(. )
min.
typ.
&2?
&2?
&
.27(
&
&2?
'(.
?5
&.
max. Units
&24
&24
&2&
.2@(
&2'( B
&24( B
6
=
E
.2&( GHI
SEMiX 402GB066HDs
SEMiX 402GAL066HDs
SEMiX 402GAR066HDs
Preliminary Data
Features
K
#LAL
*2
1
'( )
&'( )
#1
%
!
0 !(
!
!4
Temperature sensor
#&..
F&..H&'(
&..) #'(( 0B
##&.. "OF&..H&'(&H1&H&..P:
OGP: F
&7
.25
B
&
B
.2.?(
GHI
8
(
M
'2(
(
M
'(.
.2?@89(N
0B
8((.9'N
G
Typical Applications
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#
$
$
Remarks
%
&'() "*
+% , %
-&(.)
#/
0 1 %
,
%
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
GAL
GAR
2
19-04-2007 SCH
© by SEMIKRON
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