SEMIX402GAR066HDS_11 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX402GAR066HDs
SEMiX^® 2s
Trench IGBT Modules
SEMiX402GAR066HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V_CE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to T_C=125°C
max.
• Product reliability results are valid for
T_j=150°C
• For short circuit: Soft R_Goff
recommended
• Take care of over-voltage caused by
stray inductance
Characteristics
Symbol
t_d(on)
t_r
E_on
t_d(off)
t_f
Conditions
V_CC = 300 V
I_C = 400 A
V_GE = ±15 V
R_{G on} = 4.5 
R_{G off} = 4.5 
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
E_off
T_j = 150 °C
R_th(j-c)
per IGBT
Inverse diode
V_F = V_EC
I_F = 400 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 150 °C
V_F0
T_j = 25 °C
T_j = 150 °C
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
T_j = 25 °C
T_j = 150 °C
I_F = 400 A
T_j = 150 °C
di/dt_off = 3700 A/µs
V_GE = -8 V
V_CC = 300 V
T_j = 150 °C
T_j = 150 °C
per diode
Freewheeling diode
V_F = V_EC
I_F = 400 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 150 °C
V_F0
T_j = 25 °C
T_j = 150 °C
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
T_j = 25 °C
T_j = 150 °C
I_F = 400 A
T_j = 150 °C
di/dt_off = 3700 A/µs
V_GE = -8 V
V_CC = 300 V
T_j = 150 °C
T_j = 150 °C
per diode
Module
L_CE
R_CC'+EE'
res., terminal-chip
T_C = 25 °C
T_C = 125 °C
R_th(c-s)
M_s
M_t
per module
to heat sink (M5)
to terminals (M6)
min.
0.9
0.75
0.8
1.1
0.9
0.75
0.7
1.0
3
2.5
typ.
150
125
22
900
65
24
1.4
1.4
1
0.85
1.0
1.4
250
47
10
1.3
1.3
1
0.85
0.9
1.2
250
47
10
18
0.7
1
0.045
max.
0.12
1.60
1.6
1.1
0.95
1.3
1.6
0.15
1.53
1.5
1.1
0.95
1.1
1.4
0.15
5
5
w
Temperatur Sensor
R₁₀₀
T_c=100°C (R₂₅=5 k)
B_100/125
R_(T)=R₁₀₀exp[B_100/125(1/T-1/T₁₀₀)]; T[K];
250
493 ± 5%
3550
±2%
Unit
ns
ns
mJ
ns
ns
mJ
K/W
V
V
V
V
m
m
A
µC
mJ
K/W
V
V
V
V
m
m
A
µC
mJ
K/W
nH
m
m
K/W
Nm
Nm
Nm
g

K
GAR
2
Rev. 1 – 23.03.2011
© by SEMIKRON